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  Si3N4 powder is the main raw material for the preparation of  silicon nitride balls . Selecting the appropriate treatment method to obtain the powder with regular shape and uniform particle size distribution is the basis for the stable implementation of Si3N4 ceramic ball forming, sintering, processing and other processes. According to the different atomization methods, the spray granulation methods of Si3N4 powder mainly include centrifugal spray granulation, pressure spray granulation and two-fluid spray granulation. Pressure spray granulation The slurry with uniform Si3N4 powder is sprayed into the granulation tower under high pressure for atomization, and the droplets are quickly dried into spherical powder by hot air flow, which can prevent the agglomeration and sedimentation of various components in the slurry. By controlling the volatilization rate of the solvent on the surface of the particles, the regular particle morphology can be obtained, and the spray granulation powder

Silicon nitride (Si3N4) balls  show great potential in the field of high-speed, high-precision, long-life bearings due to their excellent properties, such as lightweight, self-lubricating, high insulation, non-magnetic, high elastic modulus and excellent corrosion resistance. This paper aims to discuss the optimization of the spray granulation process of Si3N4 powder, especially the pressure spray granulation method, in order to improve the density, mechanical properties and microstructure of Si3N4 balls, so as to meet the urgent demand for high-performance bearing materials in aerospace, automotive and wind power generation fields.   With the rapid development of industrial technology, the requirements for material properties are increasingly stringent. As a new type of high performance bearing material, Si3N4 ceramic ball has become a research hotspot to further improve its performance. Among them, the blank density, as a key factor affecting the final performance of ceramic balls, i

  Aluminium oxide (Al2O3) rods , commonly referred to as alumina ceramic rods, constitute an outstanding group of engineering materials that embody a unique array of superior qualities. Renowned for their unparalleled hardness, durability, and remarkable thermal stability, these rods are indispensable in diverse industrial sectors. Beyond their mechanical prowess and thermal endurance, alumina ceramic rods possess exceptional electrical insulation capabilities, resisting the passage of electric current effectively. This feature renders them invaluable in the electronics industry, where they find applications in numerous electrical components and gadgets. Their impressive dielectric strength coupled with low thermal conductivity further underscores their suitability for electrical purposes. Moreover, alumina ceramic rods demonstrate outstanding chemical resistance, enabling them to endure exposure to a broad spectrum of corrosive agents, acids, and alkaline solutions. This resilience ma

  With the rapid development of high-tech industry, the requirements for fineness, purity and consistency of powder materials are increasing. As a key component in the powder preparation process, the performance of grinding medium directly determines the quality of the final product. Traditionally, zirconia ceramic balls are widely used in the field of ultra-fine grinding because of their high bending strength, wear resistance and certain high toughness. However, its timeliness failure and performance instability at high temperatures limit its application in high-end powder manufacturing. This paper aims to explore the unique advantages of   silicon nitride balls  as a new generation of grinding media, and explain how they can replace   zirconia balls  and significantly improve the quality of high-tech powder products.   Powder industry as an important branch of materials science, the performance of its products is directly related to the development of semiconductor, biomedicine, aero

  With the rapid development of nanotechnology and ultrafine material science, the demand for high-purity and ultrafine powder is increasing day by day.   Silicon nitride ball , with its excellent hardness, very low wear rate and good chemical stability, has gradually become the key grinding medium in the field of ultrafine grinding. The purpose of this paper is to systematically describe the performance characteristics of silicon nitride ceramic balls as grinding media, and deeply discuss its application advantages and specific uses in the process of ultrafine grinding, so as to provide theoretical basis and practical guidance for the research and application in related fields.   Ultrafine grinding technology is an important branch of modern material preparation and processing, which is of great significance for improving material properties and expanding material application fields. Traditional grinding media such as steel ball, alumina ball, etc., often have problems in the grinding

  With the rapid development of modern mechanical engineering technology, the requirements for material properties are increasingly stringent, especially under extreme conditions such as high temperature, high speed, strong corrosion, etc., traditional metal materials and polymer materials have been difficult to meet the needs. Silicon nitride (Si ₄) As an advanced ceramic material with excellent overall properties, the silicon nitride balls made of it show their unique characteristics and wide application prospects in the field of mechanical engineering. In this paper, the properties and characteristics of silicon nitride balls are reviewed, their specific applications in mechanical engineering are discussed, and their future development trends are prospected.   Silicon nitride ceramics are known as "the pearl in the crown of advanced ceramics" for their high strength, high hardness, good thermal stability, corrosion resistance, oxidation resistance and self-lubrication. As

  Silicon carbide, the emerging star of the semiconductor material industry, is gradually leading the innovation trend of microelectronics technology with its excellent performance indicators. Its unique thermal conductivity, far superior to traditional semiconductor materials, provides the possibility for efficient heat dissipation, especially in high-power electronic devices show unparalleled advantages. Coupled with its wide band gap characteristics, the   silicon carbide substrate  can maintain stable electrical performance in extreme environments and is not affected by temperature fluctuations, which greatly broadens its scope of application in high-end applications such as aerospace and new energy vehicles. In addition, the two key parameters of high breakdown electric field and high electron mobility have laid a solid foundation for the application of silicon carbide in high-frequency and high-voltage electronic devices, such as power electronic converters, RF communication devi