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  With the continuous progress of semiconductor technology, silicon carbide (SiC), as a high-performance material, has shown great application potential in the field of power electronic devices. However, in the preparation process of   silicon carbide substrate , surface quality control is particularly critical, especially after thinning, grinding and polishing and other processes to obtain ultra-smooth surface. Among them, chemical mechanical polishing (CMP), as one of the key steps, is of great significance for removing the damaged layer left by the previous process and achieving high surface levelling. However, the traditional CMP process faces the problem of low material removal rate (MRR), which directly affects the production efficiency and cost. Therefore, exploring new technologies to improve the CMP efficiency of SiC substrate has become the focus of current research.   1. Basic principles and challenges of SiC substrate CMP The surface damage depth of the t...

  Silicon carbide substrate , as a new generation of semiconductor products, has shown great application potential in the field of power electronic devices because of its excellent physical and chemical properties. However, high efficiency and low loss cutting of SiC ingot is one of the key technologies restricting its mass production. At present, mortar wire cutting and diamond wire cutting are the two mainstream technologies in SiC ingot cutting, and they have significant differences in the ways of abrasive introduction, processing efficiency, material loss and environmental impact. This article aims to compare and analyze the characteristics of these two cutting technologies, and discuss the optimization direction of SiC cutting process.   1. Abrasive import mode and processing efficiency · mortar wire cutting: using free abrasive, the processing speed is relatively slow. · diamond wire cutting: through electroplating, resin bonding and other methods to fix the ab...

  In the manufacturing process of SiC (silicon carbide) substrate, the cutting of SiC ingot is a crucial step. It not only directly determines the surface quality and dimensional accuracy of the substrate, but also has a decisive influence on cost control. The key parameters determined by the cutting process, such as surface roughness (Ra), total thickness deviation (TTV), warping (BOW) and bending (WARP), have a profound impact on the final quality, yield and production cost of the substrate. In addition, the quality of cutting is also directly related to the efficiency and cost of subsequent grinding and polishing processes. Therefore, the development and progress of SiC ingot cutting technology is of great significance to improve the level of the entire   silicon carbide substrate  manufacturing industry.   Diamond saw blade, circular saw blade, elimination, large Ra difference, large warpage, wide slit, slow speed, low precision, loud noise Electric spark: wire +...

  Although the processing of   silicon carbide substrate  is difficult, in order to make the application of single crystal silicon carbide in electronic components become the future direction of development, so that silicon carbide devices are large-scale application and promotion, it is necessary to find a way to solve the problem of difficult silicon carbide processing.   At present, the SiC material processing technology mainly has the following processes: directional cutting, chip rough grinding, fine grinding, mechanical polishing and chemical mechanical polishing (fine polishing). Among them, chemical-mechanical polishing is the final process, and its process method selection, process route arrangement and process parameter optimization directly affect the polishing efficiency and processing cost.   However, due to the high hardness and chemical stability of SiC materials, the material removal rate in the traditional CMP polishing process is low. Therefore...

  Silicon carbide (SiC) as a high performance semiconductor material, because of its excellent physical and chemical properties, in power electronics, radio frequency microwave, optoelectronics and other fields show great application potential. However, the high hardness and stable lattice structure of silicon carbide pose great challenges to its polishing process. This article will focus on the reasons for the difficulty of polishing   silicon carbide substrate , in order to provide reference for the research and application in related fields.   First, high hardness and brittleness caused by polishing problems The ultra-high hardness of silicon carbide is one of its remarkable characteristics, and the Mohs hardness is up to 9.5, second only to diamond. This high hardness characteristic makes it necessary to use equally high hardness abrasives and tools in the polishing process. However, high hardness abrasives often lead to rapid wear of polishing tools during the polish...