What Are The Benefits Of Silicon Carbide Substrate In Power Eelectronic Devices?
Silicon carbide substrate , as a new generation of semiconductor products, has shown great application potential in the field of power electronic devices because of its excellent physical and chemical properties. However, high efficiency and low loss cutting of SiC ingot is one of the key technologies restricting its mass production. At present, mortar wire cutting and diamond wire cutting are the two mainstream technologies in SiC ingot cutting, and they have significant differences in the ways of abrasive introduction, processing efficiency, material loss and environmental impact. This article aims to compare and analyze the characteristics of these two cutting technologies, and discuss the optimization direction of SiC cutting process. 1. Abrasive import mode and processing efficiency · mortar wire cutting: using free abrasive, the processing speed is relatively slow. · diamond wire cutting: through electroplating, resin bonding and other methods to fix the ab...