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  With the continuous progress of semiconductor technology, silicon carbide (SiC), as a high-performance material, has shown great application potential in the field of power electronic devices. However, in the preparation process of   silicon carbide substrate , surface quality control is particularly critical, especially after thinning, grinding and polishing and other processes to obtain ultra-smooth surface. Among them, chemical mechanical polishing (CMP), as one of the key steps, is of great significance for removing the damaged layer left by the previous process and achieving high surface levelling. However, the traditional CMP process faces the problem of low material removal rate (MRR), which directly affects the production efficiency and cost. Therefore, exploring new technologies to improve the CMP efficiency of SiC substrate has become the focus of current research.   1. Basic principles and challenges of SiC substrate CMP The surface damage depth of the thinned or ground Si

  With the wide application of silicon carbide (SiC) in semiconductor devices, the quality requirements of   silicon carbide substrates  are becoming more and more stringent. SiC devices have strict regulations on the surface thickness change, surface roughness (Ra), machining damage and residual stress of the liner film. However, the SiC substrate after cutting and stripping often has problems such as damaged layer, high surface roughness and poor flatness. These problems must be solved by effective flattening process to obtain high quality polished sheet for subsequent epitaxy process. This article will focus on the grinding and grinding technology in the SiC substrate flattening process, and compare and analyze their advantages and disadvantages.   1. Current situation and limitation of grinding process   The grinding process has a high share of the market, including two stages of rough grinding and fine grinding, and requires single-side mechanical polishing (DMP) before chemical m

  Silicon carbide substrate , as a new generation of semiconductor products, has shown great application potential in the field of power electronic devices because of its excellent physical and chemical properties. However, high efficiency and low loss cutting of SiC ingot is one of the key technologies restricting its mass production. At present, mortar wire cutting and diamond wire cutting are the two mainstream technologies in SiC ingot cutting, and they have significant differences in the ways of abrasive introduction, processing efficiency, material loss and environmental impact. This article aims to compare and analyze the characteristics of these two cutting technologies, and discuss the optimization direction of SiC cutting process.   1. Abrasive import mode and processing efficiency · mortar wire cutting: using free abrasive, the processing speed is relatively slow. · diamond wire cutting: through electroplating, resin bonding and other methods to fix the abrasive particles, c

  In the manufacturing process of SiC (silicon carbide) substrate, the cutting of SiC ingot is a crucial step. It not only directly determines the surface quality and dimensional accuracy of the substrate, but also has a decisive influence on cost control. The key parameters determined by the cutting process, such as surface roughness (Ra), total thickness deviation (TTV), warping (BOW) and bending (WARP), have a profound impact on the final quality, yield and production cost of the substrate. In addition, the quality of cutting is also directly related to the efficiency and cost of subsequent grinding and polishing processes. Therefore, the development and progress of SiC ingot cutting technology is of great significance to improve the level of the entire   silicon carbide substrate  manufacturing industry.   Diamond saw blade, circular saw blade, elimination, large Ra difference, large warpage, wide slit, slow speed, low precision, loud noise Electric spark: wire + current, eliminate

  With the rapid development of semiconductor technology, silicon carbide (SiC), as a semiconductor material with excellent physical and chemical properties, has shown great application potential in the field of high-performance electronic devices. However, to give full play to the advantages of SiC materials, the preparation of high-quality   silicon carbide substrate  is a crucial part. This paper aims to discuss the fine preparation process of SiC substrate, through a series of precise process steps to ensure that the final SiC substrate can meet the strict requirements of high-performance electronic devices.   1. Initial treatment: smooth and round The SiC crystals obtained after the single crystal growth process must first be smoothed to eliminate surface unevenness and growth defects. This step provides a good basis for subsequent processing. Then a rolling process is carried out to smooth the edge of the crystal anchor, creating favorable conditions for the cutting operation and

  In the intricate world of industrial applications,   alumina ceramic rods   stand as a testament to durability and performance. Their unparalleled strength and resistance to harsh conditions have made them a staple in numerous industries, from aerospace to energy production. However, to harness their full potential and maintain their exceptional properties over the long haul, proper maintenance and care are paramount. Neglecting these critical steps can lead to premature wear, cracking, and even failure of these vital components. That's why we've compiled a comprehensive guide to ensure that your alumina ceramic rods remain in peak condition, maximizing their lifespan and reliability. To ensure the long-term performance and reliability of alumina ceramic rods, proper maintenance and care are essential. Here are some key tips to consider: 1. Handling and storage Alumina ceramic rods are relatively brittle and can be susceptible to chipping or cracking if not handled with care.

  With the rapid development of modern electronic technology, the design of microwave RF components and high-frequency circuits is becoming more and more complex, and the performance requirements of components are becoming higher and higher. In order to meet these needs, thin film technology, as an advanced microelectronic technology, plays an increasingly important role in the design of microwave components and high-frequency circuits. This article introduces several thin film components based on   alumina substrate  design, including thin film attenuators, thin film couplers, thin film Bridges, thin film resistors, and thin film capacitors. These components play an indispensable role in microwave RF components and high-frequency circuits with their unique properties and wide application fields.   1 Film attenuator The design of thin film attenuator using alumina ceramic substrate is often used for large signal attenuation in microwave RF module, or for multi-stage adjustment of atten

  With the rapid development of modern microwave communication technology, the design of microwave circuit components with high performance and high precision has become increasingly important. In microwave radio frequency (RF) modules, thin-film circuit technology has become a key design method with its unique advantages. In this paper, several thin film circuit components based on   alumina substrate  are introduced in detail, including thin film microstrip circuit, thin film filter, thin film load, thin film equalizer and thin film power divider. These components play an irreplaceable role in microwave circuits, and their design accuracy and performance directly affect the performance of the whole microwave system.   Applications of alumina substrate in circuit   1 Thin film microstrip circuit Aluminum oxide ceramic substrate is used to design thin film microstrip circuit, the thickness of the gold layer can be up to 3.5um, and the metal wire bonding can be used to connect with the