Fabrication Technology of Thick Film Resistors on AlN Substrate
With the continuous progress of microelectronics packaging technology, the power and integration of electronic components have significantly increased, which has led to a significant increase in the heat generation per unit volume, which has put forward more stringent requirements for the heat dissipation efficiency (that is, its heat conduction performance) of the new generation of circuit boards. At present, researchers are working to develop a variety of ceramic substrate materials with high thermal conductivity, including aluminum nitride (AlN) , silicon carbide (SiC) and beryllium oxide (BeO) . However, BeO is environmentally limited due to its toxicity; SiC is not suitable for use as substrate material because of its high dielectric constant properties. In contrast, AlN is the preferred substrate material choice due to its similar thermal expansion coefficient and moderate dielectric constant to silicon (Si) materials. Traditionally, thick film slurps are mainly design